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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION *With TO-220F package *Complement to type 2SC3746 *Low saturation voltage *Excellent current dependence of hFE *Short switching time APPLICATIONS *Various inductance of lamp drivers for electrical equipment *Inverters ,converters *Power amplification *Switching regulator ,driver PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION 2SA1469 Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector power dissipation TC=25 Tj Tstg Junction temperature Storage temperature 20 150 -55~150 CONDITIONS Open emitter Open base Open collector VALUE -80 -60 -5 -5 -7 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat ICBO IEBO hFE fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency CONDITIONS IC=-1mA ;RBE= IC=-10mA ;IE=0 IE=-10mA ;IC=0 IC=-2.5A IB=-0.125A VCB=-40V IE=0 VEB=-4V; IC=0 IC=-1A ; VCE=-2V IC=-1A ; VCE=-5V 70 MIN -60 -80 -5 2SA1469 TYP. MAX UNIT V V V -0.4 -0.1 -0.1 280 100 V mA mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=-2.0A;IB1=-IB2=-0.1A VCC=20V ,RL=10 0.1 0.5 0.1 s s s hFE Classifications Q 70-140 R 100-200 S 140-280 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE 2SA1469 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1469 4 |
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